Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors.

Published

Journal Article

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for the contacts, is linear in the diameter and inverse temperature. These results are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure of nanotubes. These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime.

Full Text

Duke Authors

Cited Authors

  • Zhou, X; Park, J-Y; Huang, S; Liu, J; McEuen, PL

Published Date

  • September 30, 2005

Published In

Volume / Issue

  • 95 / 14

Start / End Page

  • 146805 -

PubMed ID

  • 16241684

Pubmed Central ID

  • 16241684

Electronic International Standard Serial Number (EISSN)

  • 1079-7114

International Standard Serial Number (ISSN)

  • 0031-9007

Digital Object Identifier (DOI)

  • 10.1103/physrevlett.95.146805

Language

  • eng