Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties.

Journal Article

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.

Full Text

Duke Authors

Cited Authors

  • Li, J; An, L; Lu, C; Liu, J

Published Date

  • February 2006

Published In

Volume / Issue

  • 6 / 2

Start / End Page

  • 148 - 152

PubMed ID

  • 16464025

International Standard Serial Number (ISSN)

  • 1530-6984

Digital Object Identifier (DOI)

  • 10.1021/nl051265k

Language

  • eng

Conference Location

  • United States