On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon

The authors report the results of an experiment of annealing Czochralski silicon at 450°C for up to 500 hrs. Concentrations of oxygen atoms (Ci) and thermal donors (TD) have both been monitored. Analyses of the oxygen concentration data yielded the apparent interpretation that the overall kinetics is dominated by the formation of small clusters (dimers and trimers). This cannot account for TD formation, since they are supposed to be larger clusters. On the other hand, analyses of existing TD kinetics models did not yield calculated Ci values to satisfactorily account for the present Ci data. They believe that a satisfactory TD model is not yet available

Duke Authors

Cited Authors

  • Tan, TY; Kleinhenz, R; Schneider, CP

Published Date

  • 1986

Published In

  • Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon

Start / End Page

  • 195 - 204