On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon
Publication
, Journal Article
Tan, TY; Kleinhenz, R; Schneider, CP
Published in: Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon
1986
The authors report the results of an experiment of annealing Czochralski silicon at 450°C for up to 500 hrs. Concentrations of oxygen atoms (Ci) and thermal donors (TD) have both been monitored. Analyses of the oxygen concentration data yielded the apparent interpretation that the overall kinetics is dominated by the formation of small clusters (dimers and trimers). This cannot account for TD formation, since they are supposed to be larger clusters. On the other hand, analyses of existing TD kinetics models did not yield calculated Ci values to satisfactorily account for the present Ci data. They believe that a satisfactory TD model is not yet available
Duke Scholars
Published In
Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon
Publication Date
1986
Start / End Page
195 / 204
Location
Boston, MA, USA
Citation
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MLA
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Tan, T. Y., Kleinhenz, R., & Schneider, C. P. (1986). On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 195–204.
Tan, T. Y., R. Kleinhenz, and C. P. Schneider. “On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon.” Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 1986, 195–204.
Tan TY, Kleinhenz R, Schneider CP. On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. 1986;195–204.
Tan, T. Y., et al. “On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon.” Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 1986, pp. 195–204.
Tan TY, Kleinhenz R, Schneider CP. On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. 1986;195–204.
Published In
Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon
Publication Date
1986
Start / End Page
195 / 204
Location
Boston, MA, USA