Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs

A quantitative determination of the contributions of the triply negatively charged Ga vacancies (V3-Ga) and of the doubly positively charged Ga self-interstitials (I2+Ga) to the Ga self-diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the V3-Ga contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the I2+Ga contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Yu, S; Gösele, U

Published Date

  • 1991

Published In

Volume / Issue

  • 70 / 9

Start / End Page

  • 4823 - 4826

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.349048

Citation Source

  • SciVal