Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect

Published

Journal Article

The metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect was described. It was found that the precipitate changed from a highly effective carrier recombination center to a carrier generation center when the junction bias was changed from forward to reverse biasing conditions, in steady states. The numerical simulation results showed that the precipitate electrical behavior resembles that of classical Shockley-Read-Hall recombination/generation centers, with a much larger activity.

Full Text

Duke Authors

Cited Authors

  • Negoita, MD; Tan, TY

Published Date

  • October 15, 2003

Published In

Volume / Issue

  • 94 / 8

Start / End Page

  • 5064 - 5070

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.1611289

Citation Source

  • Scopus