Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect

The metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect was described. It was found that the precipitate changed from a highly effective carrier recombination center to a carrier generation center when the junction bias was changed from forward to reverse biasing conditions, in steady states. The numerical simulation results showed that the precipitate electrical behavior resembles that of classical Shockley-Read-Hall recombination/generation centers, with a much larger activity.

Full Text

Duke Authors

Cited Authors

  • Negoita, MD; Tan, TY

Published Date

  • 2003

Published In

  • Journal of Applied Physics

Volume / Issue

  • 94 / 8

Start / End Page

  • 5064 - 5070

Digital Object Identifier (DOI)

  • 10.1063/1.1611289

Citation Source

  • SciVal