Point defects and diffusion in silicon and gallium arsenide

Published

Journal Article (Academic article)

Point defects and diffusion mechanisms in silicon and gallium arsenide are discussed with special emphasis on charge and non-equilibrium effects. For understanding diffusion processes in silicon and in GaAs both vacancies and self-interstitials in various charge states have to be taken into account. Results on dopant-enhanced intermixing of GaAs/AlGaAs superlattices make it possible to draw conclusions on the diffusion mechanisms of Ga, Be and Zn in GaAs

Duke Authors

Cited Authors

  • Gosele, U; Tan, TY

Published Date

  • 1988

Published In

  • Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein)

Volume / Issue

  • A59 /

Start / End Page

  • 1 - 16