Point defects and diffusion in silicon and gallium arsenide

Point defects and diffusion mechanisms in silicon and gallium arsenide are discussed with special emphasis on charge and non-equilibrium effects. For understanding diffusion processes in silicon and in GaAs both vacancies and self-interstitials in various charge states have to be taken into account. Results on dopant-enhanced intermixing of GaAs/AlGaAs superlattices make it possible to draw conclusions on the diffusion mechanisms of Ga, Be and Zn in GaAs

Duke Authors

Cited Authors

  • Gosele, U; Tan, TY

Published Date

  • 1988

Published In

  • Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein)

Volume / Issue

  • A59 /

Start / End Page

  • 1 - 16