The diffusivity of silicon self-interstitials
The diffusivity D1 of silicon self-interstitials plays an important role in the quantitative modeling of many technological processes for microelectronic and photovoltaic silicon devices. Examples are swirl-defect formation during crystal growth, oxygen precipitation, oxidation-enhanced diffusion, oxidation-induced stacking faults, gettering phenomena, and non-equilibrium effects associated with high-concentration phosphorus diffusion. This paper reviews the various attempts to measure or estimate D1, which in spite of all the effort remains a fairly elusive quantity partly because of interactions of self-interstitials with coexisting vacancies and sinks in the material. © 1989, Taylor & Francis Group, LLC. All rights reserved.
Taylor, W; Marioton, BPR; Tan, TY; Gosele, U
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