The diffusivity of silicon self-interstitials

Published

Journal Article

The diffusivity D1 of silicon self-interstitials plays an important role in the quantitative modeling of many technological processes for microelectronic and photovoltaic silicon devices. Examples are swirl-defect formation during crystal growth, oxygen precipitation, oxidation-enhanced diffusion, oxidation-induced stacking faults, gettering phenomena, and non-equilibrium effects associated with high-concentration phosphorus diffusion. This paper reviews the various attempts to measure or estimate D1, which in spite of all the effort remains a fairly elusive quantity partly because of interactions of self-interstitials with coexisting vacancies and sinks in the material. © 1989, Taylor & Francis Group, LLC. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Taylor, W; Marioton, BPR; Tan, TY; Gosele, U

Published Date

  • December 1, 1989

Published In

Volume / Issue

  • 111-112 / 1-2

Start / End Page

  • 131 - 150

Electronic International Standard Serial Number (EISSN)

  • 1029-4953

International Standard Serial Number (ISSN)

  • 1042-0150

Digital Object Identifier (DOI)

  • 10.1080/10420158908212989

Citation Source

  • Scopus