The diffusivity of silicon self-interstitials

The diffusivity Dl of silicon self-interstitials plays an important role in the quantitative modeling of many technological processes for microelectronic and photovoltaic silicon devices. Examples are swirl-defect formation during crystal growth, oxygen precipitation, oxidation-enhanced diffusion, oxidation-induced stacking faults, gettering phenomena, and nonequilibrium effects associated with high-concentration phosphorus diffusion. This paper reviews the various attempts to measure or estimate Dl, which in spite of all the effort remains a fairly elusive quantity partly because of interactions of self-interstitials with co-existing vacancies and sinks in the material

Duke Authors

Cited Authors

  • Taylor, W; Marioton, BPR; Tan, TY; Gosele, U

Published Date

  • 1989

Published In

  • Radiat. Eff. Defects Solids (UK)

Volume / Issue

  • 111-112 / 1-2

Start / End Page

  • 131 - 150