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The diffusivity of silicon self-interstitials

Publication ,  Journal Article
Taylor, W; Marioton, BPR; Tan, TY; Gosele, U
Published in: Radiat. Eff. Defects Solids (UK)
1989

The diffusivity Dl of silicon self-interstitials plays an important role in the quantitative modeling of many technological processes for microelectronic and photovoltaic silicon devices. Examples are swirl-defect formation during crystal growth, oxygen precipitation, oxidation-enhanced diffusion, oxidation-induced stacking faults, gettering phenomena, and nonequilibrium effects associated with high-concentration phosphorus diffusion. This paper reviews the various attempts to measure or estimate Dl, which in spite of all the effort remains a fairly elusive quantity partly because of interactions of self-interstitials with co-existing vacancies and sinks in the material

Duke Scholars

Teh Yu Tan
Author Teh Yu Tan Thomas Lord Department of Mechanical Engineering and Materia ...

Published In

Radiat. Eff. Defects Solids (UK)

Publication Date

1989

Volume

111-112

Issue

1-2

Start / End Page

131 / 150

Related Subject Headings

  • Applied Physics
  • 5106 Nuclear and plasma physics
  • 3407 Theoretical and computational chemistry
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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Taylor, W., Marioton, B. P. R., Tan, T. Y., & Gosele, U. (1989). The diffusivity of silicon self-interstitials. Radiat. Eff. Defects Solids (UK), 111–112(1–2), 131–150.
Taylor, W., B. P. R. Marioton, T. Y. Tan, and U. Gosele. “The diffusivity of silicon self-interstitials.” Radiat. Eff. Defects Solids (UK) 111–112, no. 1–2 (1989): 131–50.
Taylor W, Marioton BPR, Tan TY, Gosele U. The diffusivity of silicon self-interstitials. Radiat Eff Defects Solids (UK). 1989;111–112(1–2):131–50.
Taylor, W., et al. “The diffusivity of silicon self-interstitials.” Radiat. Eff. Defects Solids (UK), vol. 111–112, no. 1–2, 1989, pp. 131–50.
Taylor W, Marioton BPR, Tan TY, Gosele U. The diffusivity of silicon self-interstitials. Radiat Eff Defects Solids (UK). 1989;111–112(1–2):131–150.

Published In

Radiat. Eff. Defects Solids (UK)

Publication Date

1989

Volume

111-112

Issue

1-2

Start / End Page

131 / 150

Related Subject Headings

  • Applied Physics
  • 5106 Nuclear and plasma physics
  • 3407 Theoretical and computational chemistry
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics