Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide

Published

Journal Article

Interdiffusion experiments with GaAsP/GaAs and GaAsSb/GaAs superlattice samples were performed at various temperatures and arsenic vapor pressures. From the depth-concentration profiles effective diffusion coefficients were calculated. The dependence of these effective diffusion coefficients on the ambient arsenic pressure led to the conclusion that the interdiffusion process is governed by a substitutional-interstitial diffusion mechanism. The good agreement of the effective diffusion coefficients of the GaAsP/GaAs and GaAsSb/GaAs samples with each other and the agreement with arsenic self-diffusion data from the literature is an indication that phosphorus and antimony have good tracer properties to investigate arsenic self diffusion. Comparing our results with sulfur in-diffusion experiments from the literature we conclude that the kick-out mechanism governs self-diffusion on the arsenic sublattice in GaAs. Our results are in contradiction to arsenic self-diffusion experiments which indicated a vacancy mechanism. © 1998 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Schultz, M; Egger, U; Scholz, R; Breitenstein, O; Gösele, U; Tan, TY

Published Date

  • May 15, 1998

Published In

Volume / Issue

  • 83 / 10

Start / End Page

  • 5295 - 5301

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.367354

Citation Source

  • Scopus