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Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide

Publication ,  Journal Article
Schultz, M; Egger, U; Scholz, R; Breitenstein, O; Gösele, U; Tan, TY
Published in: Journal of Applied Physics
May 15, 1998

Interdiffusion experiments with GaAsP/GaAs and GaAsSb/GaAs superlattice samples were performed at various temperatures and arsenic vapor pressures. From the depth-concentration profiles effective diffusion coefficients were calculated. The dependence of these effective diffusion coefficients on the ambient arsenic pressure led to the conclusion that the interdiffusion process is governed by a substitutional-interstitial diffusion mechanism. The good agreement of the effective diffusion coefficients of the GaAsP/GaAs and GaAsSb/GaAs samples with each other and the agreement with arsenic self-diffusion data from the literature is an indication that phosphorus and antimony have good tracer properties to investigate arsenic self diffusion. Comparing our results with sulfur in-diffusion experiments from the literature we conclude that the kick-out mechanism governs self-diffusion on the arsenic sublattice in GaAs. Our results are in contradiction to arsenic self-diffusion experiments which indicated a vacancy mechanism. © 1998 American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

May 15, 1998

Volume

83

Issue

10

Start / End Page

5295 / 5301

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Schultz, M., Egger, U., Scholz, R., Breitenstein, O., Gösele, U., & Tan, T. Y. (1998). Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide. Journal of Applied Physics, 83(10), 5295–5301. https://doi.org/10.1063/1.367354
Schultz, M., U. Egger, R. Scholz, O. Breitenstein, U. Gösele, and T. Y. Tan. “Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide.” Journal of Applied Physics 83, no. 10 (May 15, 1998): 5295–5301. https://doi.org/10.1063/1.367354.
Schultz M, Egger U, Scholz R, Breitenstein O, Gösele U, Tan TY. Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide. Journal of Applied Physics. 1998 May 15;83(10):5295–301.
Schultz, M., et al. “Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide.” Journal of Applied Physics, vol. 83, no. 10, May 1998, pp. 5295–301. Scopus, doi:10.1063/1.367354.
Schultz M, Egger U, Scholz R, Breitenstein O, Gösele U, Tan TY. Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide. Journal of Applied Physics. 1998 May 15;83(10):5295–5301.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

May 15, 1998

Volume

83

Issue

10

Start / End Page

5295 / 5301

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences