ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON.
Publication
, Journal Article
Goesele, U; Tan, TY
Published in: Proceedings - The Electrochemical Society
December 1, 1983
Duke Scholars
Published In
Proceedings - The Electrochemical Society
Publication Date
December 1, 1983
Volume
83-4
Start / End Page
17 / 36
Citation
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ICMJE
MLA
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Goesele, U., & Tan, T. Y. (1983). ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON. Proceedings - The Electrochemical Society, 83–4, 17–36.
Goesele, U., and T. Y. Tan. “ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON.” Proceedings - The Electrochemical Society 83–4 (December 1, 1983): 17–36.
Goesele U, Tan TY. ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON. Proceedings - The Electrochemical Society. 1983 Dec 1;83–4:17–36.
Goesele, U., and T. Y. Tan. “ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON.” Proceedings - The Electrochemical Society, vol. 83–4, Dec. 1983, pp. 17–36.
Goesele U, Tan TY. ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON. Proceedings - The Electrochemical Society. 1983 Dec 1;83–4:17–36.
Published In
Proceedings - The Electrochemical Society
Publication Date
December 1, 1983
Volume
83-4
Start / End Page
17 / 36