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Ion-induced defects in semiconductors

Publication ,  Journal Article
Corbett, JW; Karins, JP; Tan, TY
Published in: Nuclear Instruments and Methods
January 1, 1981

The status of our knowledge of ion-induced defects in semiconductors will be reviewed, including the charge-state dependence of defects, novel defect migration mechanism and enhanced damage production mechanisms. The main emphasis will be on defects in silicon where a panorama of defects is emerging which encompasses the evolution of damage from vacancies and interstitials and their aggregates to stacking faults and dislocations to disordered zones and the development of an amorphous layer. © 1981.

Duke Scholars

Published In

Nuclear Instruments and Methods

DOI

ISSN

0029-554X

Publication Date

January 1, 1981

Volume

182-183

Issue

PART 1

Start / End Page

457 / 476
 

Citation

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ICMJE
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Corbett, J. W., Karins, J. P., & Tan, T. Y. (1981). Ion-induced defects in semiconductors. Nuclear Instruments and Methods, 182183(PART 1), 457–476. https://doi.org/10.1016/0029-554X(81)90717-5
Corbett, J. W., J. P. Karins, and T. Y. Tan. “Ion-induced defects in semiconductors.” Nuclear Instruments and Methods 182–183, no. PART 1 (January 1, 1981): 457–76. https://doi.org/10.1016/0029-554X(81)90717-5.
Corbett JW, Karins JP, Tan TY. Ion-induced defects in semiconductors. Nuclear Instruments and Methods. 1981 Jan 1;182–183(PART 1):457–76.
Corbett, J. W., et al. “Ion-induced defects in semiconductors.” Nuclear Instruments and Methods, vol. 182–183, no. PART 1, Jan. 1981, pp. 457–76. Scopus, doi:10.1016/0029-554X(81)90717-5.
Corbett JW, Karins JP, Tan TY. Ion-induced defects in semiconductors. Nuclear Instruments and Methods. 1981 Jan 1;182–183(PART 1):457–476.

Published In

Nuclear Instruments and Methods

DOI

ISSN

0029-554X

Publication Date

January 1, 1981

Volume

182-183

Issue

PART 1

Start / End Page

457 / 476