The status of knowledge of ion-induced defects in semiconductors is reviewed, including the charge-state dependence of defects, novel defect migration mechanisms and enhanced damage production mechanisms. The main emphasis is on defects in silicon where a panorama of defects is emerging which encompasses the evolution of damage from vacancies and interstitials and their aggregates to stacking faults and dislocations to disordered zones and the development of an amorphous layer.

Full Text

Duke Authors

Cited Authors

  • Corbett, JW; Karins, JP; Tan, TY

Published Date

  • 1980

Published In

  • Nuclear instruments and methods

Volume / Issue

  • 182 / 183/pt 1

Start / End Page

  • 457 - 447

Digital Object Identifier (DOI)

  • 10.1016/0029-554X(81)90717-5

Citation Source

  • SciVal