Modeling of nucleation and growth of voids in silicon

Journal Article (Journal Article)

During Si crystal growth, nucleation and growth of voids and vacancy-type dislocation loops under Si vacancy supersaturation conditions have been modeled. From nucleation barrier calculations, it is shown that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy of Si vacancy formation. The void growth process has been calculated using a moving boundary formulation. Matching the results of void nucleation and growth simulations and taking into account the competition between the two processes, limited time available, and the crystal cooling rate, it is shown that the experimentally observed void density and size data can be explained if the Si vacancy formation enthalpy is in the range of 2.8-3.4 eV and the void nucleation temperature is in the range of 970-1060 °C. © 1998 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Plekhanov, PS; Gösele, UM; Tan, TY

Published Date

  • July 15, 1998

Published In

Volume / Issue

  • 84 / 2

Start / End Page

  • 718 - 726

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.368128

Citation Source

  • Scopus