Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs

A quantitative determination of the contribution of As self-interstitials to the As self-diffusion coefficient in GaAs has been carried out. Values of the As self-interstitial contributions are deduced from sulfur indiffusion profiles in GaAs, which are simulated based on the kick-out mechanism. Furthermore, the relative contributions of As self-interstitials and of As vacancies are discussed.© 1995 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Uematsu, M; Werner, P; Schultz, M; Tan, TY; Gösele, UM

Published Date

  • 1995

Published In

Volume / Issue

  • 67 /

Start / End Page

  • 2863- -

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.114810

Citation Source

  • SciVal