Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect

The modeling work on the electrical behavior of metallic precipitates in the depletion region of metal-oxide-semiconductor (MOS) capacitors, which is also based on the Schottky effect is reported. Besides the pn junction, the MOS capacitor is the most abundantly used device in Si ICs. In fact, aside from source and drain regions, the MOS field-effect transistor (MOSFET) is itself a capacitor.

Full Text

Duke Authors

Cited Authors

  • Negoita, MD; Tan, TY

Published Date

  • 2004

Published In

  • Journal of Applied Physics

Volume / Issue

  • 95 / 1

Start / End Page

  • 191 - 198

Digital Object Identifier (DOI)

  • 10.1063/1.1630701

Citation Source

  • SciVal