ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION.

We describe the nature of an exigent-accommodation-volume factor associated with oxygen (O//i) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO//2 precipitate nucleation and growth phenomena. Employing this factor, we describe the possible explanations of two outstanding features of O//i precipitation in CZ Si: the precipitation retardation/recovery and the nucleation incubation phenomena.

Duke Authors

Cited Authors

  • Tan, TY; Kung, CY

Published Date

  • 1986

Published In

  • Proceedings - The Electrochemical Society

Volume / Issue

  • 86-4 /

Start / End Page

  • 864 - 873

Citation Source

  • SciVal