Oxygen precipitation and the generation of dislocations in silicon


Journal Article

Oxygen-rich precipitates in silicon, and the generation of dislocations at the interfaces between the precipitates and the matrix were observed. The precipitates are square-shaped plates with <110> sides and (100) habit planes. Prismatic dislocation loops are generated in silicon by the mechanism of prismatic punching. The loops are identified as interstitial loops with ½ <110> Burgers vectors and <110> axis. An ideal loop is rhombus-shaped with line senses in <112> directions. Nucleation of loops follows the mechanism of Ashby and Johnson (1969): a shear loop is nucleated on an initial slip plane and completes a rhombus-shaped prismatic loop by repeated cross-slips. To our knowledge, the loop nucleation process is identified for the first time for a system completely under internal stress. © 1976, Taylor & Francis Group, LLC. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Tice, WK

Published Date

  • January 1, 1976

Published In

Volume / Issue

  • 34 / 4

Start / End Page

  • 615 - 631

International Standard Serial Number (ISSN)

  • 0031-8086

Digital Object Identifier (DOI)

  • 10.1080/14786437608223798

Citation Source

  • Scopus