Carbon precipitation in silicon: Why is it so difficult


Journal Article

It is well-established that oxygen precipitation in silicon occurs readily and is further facilitated by the presence of carbon. In contrast, carbon precipitation in silicon appears to be a difficult process which takes place only in the presence of a sufficiently high supersaturation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the volume decrease associated with carbon precipitation or agglomeration allows one to understand the precipitation behavior of carbon in silicon.

Full Text

Duke Authors

Cited Authors

  • Taylor, WJ; Tan, TY; Gösele, U

Published Date

  • December 1, 1993

Published In

Volume / Issue

  • 62 / 25

Start / End Page

  • 3336 - 3338

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.109063

Citation Source

  • Scopus