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Diffusion in GaAs and related compounds: Recent developments

Publication ,  Journal Article
Gösele, U; Tan, TY; Schultz, M; Egger, U; Werner, P; Scholz, R; Breitenstein, O
Published in: Defect and Diffusion Forum
January 1, 1997

This paper reviews recent developments in our understanding of self- and impurity diffusion processes in gallium arsenide with special emphasis on incorporating recent gallium isotope diffusion data. Specific diffusion mechanisms for carbon, phosphorus, antimony, and sulfur, which are all substitutionally dissolved on the arsenic sublattice are suggested.

Duke Scholars

Published In

Defect and Diffusion Forum

DOI

EISSN

1662-9507

ISSN

1012-0386

Publication Date

January 1, 1997

Volume

143-147

Start / End Page

1079 / 1094

Related Subject Headings

  • Materials
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0204 Condensed Matter Physics
 

Citation

APA
Chicago
ICMJE
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Gösele, U., Tan, T. Y., Schultz, M., Egger, U., Werner, P., Scholz, R., & Breitenstein, O. (1997). Diffusion in GaAs and related compounds: Recent developments. Defect and Diffusion Forum, 143147, 1079–1094. https://doi.org/10.4028/www.scientific.net/DDF.143-147.1079
Gösele, U., T. Y. Tan, M. Schultz, U. Egger, P. Werner, R. Scholz, and O. Breitenstein. “Diffusion in GaAs and related compounds: Recent developments.” Defect and Diffusion Forum 143–147 (January 1, 1997): 1079–94. https://doi.org/10.4028/www.scientific.net/DDF.143-147.1079.
Gösele U, Tan TY, Schultz M, Egger U, Werner P, Scholz R, et al. Diffusion in GaAs and related compounds: Recent developments. Defect and Diffusion Forum. 1997 Jan 1;143–147:1079–94.
Gösele, U., et al. “Diffusion in GaAs and related compounds: Recent developments.” Defect and Diffusion Forum, vol. 143–147, Jan. 1997, pp. 1079–94. Scopus, doi:10.4028/www.scientific.net/DDF.143-147.1079.
Gösele U, Tan TY, Schultz M, Egger U, Werner P, Scholz R, Breitenstein O. Diffusion in GaAs and related compounds: Recent developments. Defect and Diffusion Forum. 1997 Jan 1;143–147:1079–1094.

Published In

Defect and Diffusion Forum

DOI

EISSN

1662-9507

ISSN

1012-0386

Publication Date

January 1, 1997

Volume

143-147

Start / End Page

1079 / 1094

Related Subject Headings

  • Materials
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0204 Condensed Matter Physics