Diffusion in GaAs and related compounds: Recent developments


Journal Article

This paper reviews recent developments in our understanding of self- and impurity diffusion processes in gallium arsenide with special emphasis on incorporating recent gallium isotope diffusion data. Specific diffusion mechanisms for carbon, phosphorus, antimony, and sulfur, which are all substitutionally dissolved on the arsenic sublattice are suggested.

Full Text

Duke Authors

Cited Authors

  • Gösele, U; Tan, TY; Schultz, M; Egger, U; Werner, P; Scholz, R; Breitenstein, O

Published Date

  • January 1, 1997

Published In

Volume / Issue

  • 143-147 /

Start / End Page

  • 1079 - 1094

Electronic International Standard Serial Number (EISSN)

  • 1662-9507

International Standard Serial Number (ISSN)

  • 1012-0386

Digital Object Identifier (DOI)

  • 10.4028/www.scientific.net/DDF.143-147.1079

Citation Source

  • Scopus