Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures

Published

Journal Article

This is the second of a series of papers treating the shallow dopant diffusion and segregation problems in semiconductor heterostructures. Employing a segregation mechanism model, which incorporates the chemical effect, the Fermi-level effect, and the effect of the junction carrier concentrations, satisfactory fits of available boron distribution profiles in GexSi1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in GexSi1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I+ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction. © Springer-Verlag 1999.

Full Text

Duke Authors

Cited Authors

  • Chen, CH; Gösele, UM; Tan, TY

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 68 / 1

Start / End Page

  • 19 - 24

International Standard Serial Number (ISSN)

  • 0947-8396

Digital Object Identifier (DOI)

  • 10.1007/s003390050848

Citation Source

  • Scopus