On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Published

Journal Article

Full Text

Duke Authors

Cited Authors

  • Chen, C-H; Tan, TY

Published Date

  • September 1, 1995

Published In

Volume / Issue

  • 61 / 4

Start / End Page

  • 397 - 405

Published By

Electronic International Standard Serial Number (EISSN)

  • 1432-0630

International Standard Serial Number (ISSN)

  • 0947-8396

Digital Object Identifier (DOI)

  • 10.1007/s003390050219