Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy
Publication
, Journal Article
Schubert, L; Werner, P; Zakharov, ND; Gerth, G; Kolb, FM; Long, L; Gösele, U; Tan, TY
Published in: Applied Physics Letters
June 14, 2004
The growth of silicon nanowhiskers on 〈111〉-oriented silicon substrates was investigated. Molecular-beam epitaxy method was used for the growth of the nanowhiskers. The dependence of the nanowhiskrers on the nanowhiskers diameter was also analyzed, using transmission electron microscopy (TEM) high-resolution scanning electron microscopy (SEM). It was observed that the rate of direct impingement of the molecular beam was time dependent and was proportional to the whisker area.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
June 14, 2004
Volume
84
Issue
24
Start / End Page
4968 / 4970
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Schubert, L., Werner, P., Zakharov, N. D., Gerth, G., Kolb, F. M., Long, L., … Tan, T. Y. (2004). Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy. Applied Physics Letters, 84(24), 4968–4970. https://doi.org/10.1063/1.1762701
Schubert, L., P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösele, and T. Y. Tan. “Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy.” Applied Physics Letters 84, no. 24 (June 14, 2004): 4968–70. https://doi.org/10.1063/1.1762701.
Schubert L, Werner P, Zakharov ND, Gerth G, Kolb FM, Long L, et al. Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy. Applied Physics Letters. 2004 Jun 14;84(24):4968–70.
Schubert, L., et al. “Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy.” Applied Physics Letters, vol. 84, no. 24, June 2004, pp. 4968–70. Scopus, doi:10.1063/1.1762701.
Schubert L, Werner P, Zakharov ND, Gerth G, Kolb FM, Long L, Gösele U, Tan TY. Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy. Applied Physics Letters. 2004 Jun 14;84(24):4968–4970.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
June 14, 2004
Volume
84
Issue
24
Start / End Page
4968 / 4970
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences