Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

The growth of silicon nanowhiskers on 〈111〉-oriented silicon substrates was investigated. Molecular-beam epitaxy method was used for the growth of the nanowhiskers. The dependence of the nanowhiskrers on the nanowhiskers diameter was also analyzed, using transmission electron microscopy (TEM) high-resolution scanning electron microscopy (SEM). It was observed that the rate of direct impingement of the molecular beam was time dependent and was proportional to the whisker area.

Full Text

Duke Authors

Cited Authors

  • Schubert, L; Werner, P; Zakharov, ND; Gerth, G; Kolb, FM; Long, L; Gösele, U; Tan, TY

Published Date

  • 2004

Published In

Volume / Issue

  • 84 / 24

Start / End Page

  • 4968 - 4970

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.1762701

Citation Source

  • SciVal