In depth generation lifetime profiling of heat‐treated czochralski silicon


Journal Article

A technique is given for measuring the MOS generation lifetime of minority carriers as a function of depth from the silicon wafer surface. The technique monitors a transient current instead of the more commonly utilized transient capacitance, and is capable of obtaining a whole in‐depth lifetime profile in one measurement. Heat treated silicon wafers examined in this study exhibit a constant high lifetime close to the wafer surface, and the lifetime decreases toward the bulk. This is correlated to SiO2 precipitation and gettering behavior. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA

Full Text

Duke Authors

Cited Authors

  • Braunig, D; Yang, KH; Tan, TY; Schneider, CP

Published Date

  • January 1, 1985

Published In

Volume / Issue

  • 92 / 1

Start / End Page

  • 327 - 335

Electronic International Standard Serial Number (EISSN)

  • 1521-396X

International Standard Serial Number (ISSN)

  • 0031-8965

Digital Object Identifier (DOI)

  • 10.1002/pssa.2210920134

Citation Source

  • Scopus