A "smarter-cut" approach to low temperature silicon layer transfer

Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200°C. © 1998 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Tong, QY; Scholz, R; Gösele, U; Lee, TH; Huang, LJ; Chao, YL; Tan, TY

Published Date

  • 1998

Published In

  • Applied Physics Letters

Volume / Issue

  • 72 / 1

Start / End Page

  • 49 - 51

Digital Object Identifier (DOI)

  • 10.1063/1.120601

Citation Source

  • SciVal