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A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding

Publication ,  Journal Article
Tong, QY; Kaido, G; Tan, TY; Gösele, U
Published in: Journal of the Electrochemical Society
January 1, 1995

A periodic acid aqueous solution has been shown to remove thermally unstable hydrocarbons from silicon surfaces resulting in residual hydrocarbon concentrations which are much lower than those after RCA cleaning. Bonded pairs of silicon wafers cleaned in the periodic acid solution prior to bonding generate no bubbles after annealing at any temperature. The powerful oxidizing reaction of periodic acid solution with hydrocarbons is believed to be responsible for the performance. Periodic acid solution is environmentally friendly, hazard-free, and compatible to mainstream semiconductor technology. © 1995, The Electrochemical Society, Inc. All rights reserved.

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Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1995

Volume

142

Issue

10

Start / End Page

201 / 203

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

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Tong, Q. Y., Kaido, G., Tan, T. Y., & Gösele, U. (1995). A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding. Journal of the Electrochemical Society, 142(10), 201–203. https://doi.org/10.1149/1.2050045
Tong, Q. Y., G. Kaido, T. Y. Tan, and U. Gösele. “A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding.” Journal of the Electrochemical Society 142, no. 10 (January 1, 1995): 201–3. https://doi.org/10.1149/1.2050045.
Tong QY, Kaido G, Tan TY, Gösele U. A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding. Journal of the Electrochemical Society. 1995 Jan 1;142(10):201–3.
Tong, Q. Y., et al. “A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding.” Journal of the Electrochemical Society, vol. 142, no. 10, Jan. 1995, pp. 201–03. Scopus, doi:10.1149/1.2050045.
Tong QY, Kaido G, Tan TY, Gösele U. A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding. Journal of the Electrochemical Society. 1995 Jan 1;142(10):201–203.

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1995

Volume

142

Issue

10

Start / End Page

201 / 203

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry