A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding

Published

Journal Article

A periodic acid aqueous solution has been shown to remove thermally unstable hydrocarbons from silicon surfaces resulting in residual hydrocarbon concentrations which are much lower than those after RCA cleaning. Bonded pairs of silicon wafers cleaned in the periodic acid solution prior to bonding generate no bubbles after annealing at any temperature. The powerful oxidizing reaction of periodic acid solution with hydrocarbons is believed to be responsible for the performance. Periodic acid solution is environmentally friendly, hazard-free, and compatible to mainstream semiconductor technology. © 1995, The Electrochemical Society, Inc. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Tong, QY; Kaido, G; Tan, TY; Gösele, U

Published Date

  • January 1, 1995

Published In

Volume / Issue

  • 142 / 10

Start / End Page

  • 201 - 203

Electronic International Standard Serial Number (EISSN)

  • 1945-7111

International Standard Serial Number (ISSN)

  • 0013-4651

Digital Object Identifier (DOI)

  • 10.1149/1.2050045

Citation Source

  • Scopus