Nucleation of stacking faults at oxide precipitate-dislocation complexes in silicon

Nucleation sites of thermal oxidation-induced stacking faults in Czochralski-grown silicon crystals have been studied by transmission electron microscopy. Such sites are commonly found to consist of oxide precipitate-dislocation complexes, which appear as center etch pits in line figures delineating faults in optical observations. Embryonic faults were detected in these complexes. These results are strong evidence that stacking faults in silicon result from dissociation of (1/2) 〈110〉 dislocations on a sessile {111} plane.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Wu, LL; Tice, WK

Published Date

  • 1976

Published In

Volume / Issue

  • 29 / 12

Start / End Page

  • 765 - 767

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.88941

Citation Source

  • SciVal