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Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices

Publication ,  Journal Article
Chen, CH; Gosele, UM; Tan, TY
Published in: Appl. Phys. A, Mater. Sci. Process. (Germany)
1999

Distribution of shallow dopants in semiconductor heterostructures in general exhibits a pronounced segregation phenomenon, which requires the description of the dopant atom diffusion and segregation processes simultaneously. We treat this class of problems in a series of three papers. In the present paper, which is the first of the three, Zn and Be distributions in III-V superlattice (SL) structures are discussed in detail. The analysis method developed in this paper is generally applicable to other cases. In the second paper we analyze B distribution in GeSi/Si heterostructures. In the third paper we treat the problems associated with a number of n-type dopants in a variety of semiconductor heterostructures. Segregation of a dopant species between two semiconductor heterostructure layers is explained by a model incorporating (i) a chemical effect on the neutral species; and (ii) a Fermi-level effect on the ionized species, because, in addition to the chemical effect, the solubility of the species also has a dependence on the semiconductor Fermi-level position. For Zn and Be in GaAs and related compounds, their diffusion process is governed by the doubly-positively-charged group III element self-interstitials (IIII2+), whose thermal equilibrium concentration, and hence also the diffusivity of Zn and Be, exhibit also a Fermi-level dependence, i.e., in proportion to p2. A heterojunction consists of a space-charge region with an electric field, in which the hole concentration is different from those in the bulk of either of the two layers forming the junction

Duke Scholars

Published In

Appl. Phys. A, Mater. Sci. Process. (Germany)

DOI

Publication Date

1999

Volume

68

Issue

1

Start / End Page

9 / 18

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics
 

Citation

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Chen, C. H., Gosele, U. M., & Tan, T. Y. (1999). Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices. Appl. Phys. A, Mater. Sci. Process. (Germany), 68(1), 9–18. https://doi.org/10.1007/s003390050847
Chen, C. H., U. M. Gosele, and T. Y. Tan. “Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices.” Appl. Phys. A, Mater. Sci. Process. (Germany) 68, no. 1 (1999): 9–18. https://doi.org/10.1007/s003390050847.
Chen CH, Gosele UM, Tan TY. Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices. Appl Phys A, Mater Sci Process (Germany). 1999;68(1):9–18.
Chen, C. H., et al. “Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices.” Appl. Phys. A, Mater. Sci. Process. (Germany), vol. 68, no. 1, 1999, pp. 9–18. Manual, doi:10.1007/s003390050847.
Chen CH, Gosele UM, Tan TY. Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices. Appl Phys A, Mater Sci Process (Germany). 1999;68(1):9–18.

Published In

Appl. Phys. A, Mater. Sci. Process. (Germany)

DOI

Publication Date

1999

Volume

68

Issue

1

Start / End Page

9 / 18

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics