Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials

This article reviews recent progress in understanding of the mechanisms of Ga self-diffusion and impurity diffusion in GaAs and the disordering of GaAs/AlGaAs superlattices. Gallium self-diffusion and Al-Ga interdiffusion under intrinsic and n-doping conditions are governed by the triply negatively charged group III sublattice vacancies VGa3-, while under heavy p-doping conditions most likely by the doubly positively charged self-interstitial IGa2+. The GaAs/AlGaAs superlattice disordering enhancement observed under n-doping by Si or by Te is due to the Fermi-level effect that increases the VGa3- concentration, while the observable or not observable disordering enhancement under p-doping by Zn or by Be is due to the combined effects of the Fermi-level, which increases the IGa2+ concentration, and the dopant in-diffusion or out-diffusion induced IGa2+ supersaturation or undersaturation, respectively. Consistent with the Ga self-diffusion mechanism in GaAs, diffusion of Si donor atoms occupying Ga sites is primarily also governed by VGa3-, while Si acceptor atoms occupying As sites, which are a minority fraction of the total, diffuses via a negatively charged As sublattice point defect species. The interstitial-substitutional p-type dopants Zn and Be diffuse via the kick-out mechanism. Their diffusion induces an IGa2+ supersaturation and undersaturation, respectively, under in-diffusion and out-diffusion conditions.

Duke Authors

Cited Authors

  • Tan, TY; Goesele, U; Yu, S

Published Date

  • 1991

Published In

  • Critical Reviews in Solid State and Materials Sciences

Volume / Issue

  • 17 / 1

Start / End Page

  • 47 - 106

Citation Source

  • SciVal