EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION.
Publication
, Journal Article
Tan, TY; Morehead, F; Gosele, U
Published in: Proceedings - The Electrochemical Society
December 1, 1983
Duke Scholars
Published In
Proceedings - The Electrochemical Society
Publication Date
December 1, 1983
Volume
83-9
Start / End Page
325 / 336
Citation
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ICMJE
MLA
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Tan, T. Y., Morehead, F., & Gosele, U. (1983). EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION. Proceedings - The Electrochemical Society, 83–9, 325–336.
Tan, T. Y., F. Morehead, and U. Gosele. “EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION.” Proceedings - The Electrochemical Society 83–9 (December 1, 1983): 325–36.
Tan TY, Morehead F, Gosele U. EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION. Proceedings - The Electrochemical Society. 1983 Dec 1;83–9:325–36.
Tan, T. Y., et al. “EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION.” Proceedings - The Electrochemical Society, vol. 83–9, Dec. 1983, pp. 325–36.
Tan TY, Morehead F, Gosele U. EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION. Proceedings - The Electrochemical Society. 1983 Dec 1;83–9:325–336.
Published In
Proceedings - The Electrochemical Society
Publication Date
December 1, 1983
Volume
83-9
Start / End Page
325 / 336