Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices

Published

Journal Article

Direct experimental evidence is presented for the correlation between void formation, dopant electrical activation, and layer intermixing in GaAs/AlGaAs superlattices (SLs). Maximum layer intermixing is observed in the regions of maximum carrier concentration and no or little void formation in Si-implanted and annealed SLs. In SLs implanted at room temperature, Si activation and layer intermixing enhancement are severely inhibited in the near-surface region where voids are formed. However, when implantation is carried out at 250°C, both the suppression of Si activation and layer intermixing enhancement in the near-surface region are reduced, concurrent with a decrease in void density.

Full Text

Duke Authors

Cited Authors

  • Lee, ST; Chen, S; Braunstein, G; Ko, KY; Ott, ML; Tan, TY

Published Date

  • December 1, 1990

Published In

Volume / Issue

  • 57 / 4

Start / End Page

  • 389 - 391

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.103701

Citation Source

  • Scopus