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Nucleation of CuSi precipitate colonies in oxygen-rich silicon

Publication ,  Journal Article
Tice, WK; Tan, TY
Published in: Applied Physics Letters
December 1, 1976

The nucleation of CuSi precipitate colonies in silicon containing substantial amounts of oxygen has been studied by transmission electron microscopy. It is shown that oxygen in Si can influence precipitation of Cu by generating prismatic dislocation loops at the interface between the Si matrix and oxygen-rich precipitates. Such loops act as nucleation sites for CuSi precipitates, which form star-shaped colonies upon continued solid solution decomposition.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1976

Volume

28

Issue

9

Start / End Page

564 / 565

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

APA
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ICMJE
MLA
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Tice, W. K., & Tan, T. Y. (1976). Nucleation of CuSi precipitate colonies in oxygen-rich silicon. Applied Physics Letters, 28(9), 564–565. https://doi.org/10.1063/1.88825
Tice, W. K., and T. Y. Tan. “Nucleation of CuSi precipitate colonies in oxygen-rich silicon.” Applied Physics Letters 28, no. 9 (December 1, 1976): 564–65. https://doi.org/10.1063/1.88825.
Tice WK, Tan TY. Nucleation of CuSi precipitate colonies in oxygen-rich silicon. Applied Physics Letters. 1976 Dec 1;28(9):564–5.
Tice, W. K., and T. Y. Tan. “Nucleation of CuSi precipitate colonies in oxygen-rich silicon.” Applied Physics Letters, vol. 28, no. 9, Dec. 1976, pp. 564–65. Scopus, doi:10.1063/1.88825.
Tice WK, Tan TY. Nucleation of CuSi precipitate colonies in oxygen-rich silicon. Applied Physics Letters. 1976 Dec 1;28(9):564–565.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1976

Volume

28

Issue

9

Start / End Page

564 / 565

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences