KINETICS OF SILICON STACKING FAULT GROWTH/SHRINKAGE IN AN OXIDIZING AMBIENT CONTAINING A CHLORINE COMPOUND.

A kinetic model for the growth and shrinkage of oxidation-induced stacking faults (OSF) in silicon in an oxidizing ambient containing a chlorine compound is developed. The main assumption used in the model is that the vacancy injection rate due to Si-Cl compound formation is essentially independent of the silicon self-interstitial injection rate due to SiO//2 growth. That is, the process of Si-Cl compound formation is not correlated with the process of SiO//2 growth. This makes it possible to calculate the OSF size from R**C**l//S//F equals 1640t**0**. **7**5 exp( minus 2. 5/kT) minus (4. 86 multiplied by 10**9t/kT) exp( minus 5. 02/kT) minus R//C//l, where R**C**l//S//F is one half the OSF length (in chlorine oxidation) in cm, t in sec, kT in eV, and R//C//l equals bt**m with b and m determined from experimental data R//C//l represents the further shrinkage of OSF size due to the action of chlorine in addition to that due to stacking fault energy. The agreement between this model and available experimental results is satisfactory.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Goesele, U

Published Date

  • 1982

Published In

  • Journal of Applied Physics

Volume / Issue

  • 53 / 7

Start / End Page

  • 4767 - 4778

Digital Object Identifier (DOI)

  • 10.1063/1.331312

Citation Source

  • SciVal