Void Formation and its Effect on Dopant Diffusion and Carrier Activation in Si-implanted GaAs


Journal Article

GaAs samples, implanted with 220 keV Si to doses ranging from 3×1013to 1×1015cm-2and annealed at 850°C were studied. Using transmission electron microscopy (TEM), voids were found in samples with implant doses ≥3×1014cm-2after an annealing time as short as 5 s. in the same region where voids were found, capacitance-voltage measurements showed abnormaly low electron concentrations. Also in the same region, secondary ion mass spectrometry (SiMS) measurements showed anomalies in the Si concentration profiles and required the interpretation that a Si redistribution process had occurred. At high Si implant doses, the onset of void formation, the abnormaly low electron concentration, and the Si accumulation anomaly are concurrent. Based on these results, we conclude that voids inhibit the Si electrical activity and lead to the Si diffusion anomaly. © 1990 IOP Publishing Ltd.

Full Text

Duke Authors

Cited Authors

  • Chen, S; Lee, ST; Braunstein, G; Ko, KY; Zheng, LR; Tan, TY

Published Date

  • January 1, 1990

Published In

Volume / Issue

  • 29 / 11

Start / End Page

  • L1950 - L1953

Electronic International Standard Serial Number (EISSN)

  • 1347-4065

International Standard Serial Number (ISSN)

  • 0021-4922

Digital Object Identifier (DOI)

  • 10.1143/JJAP.29.L1950

Citation Source

  • Scopus