Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications

Journal Article (Journal Article)

The liquid aluminum layer method for gettering metallic impurities in multicrystalline Si wafers used for solar cell fabrication is modeled. Aspects modeled include impurity atom diffusion and segregation, and precipitate dissolution using Fe as the impurity. The carrier capture cross section of impurity precipitates is derived. Based on the model, a variable temperature scheme is proposed for faster and more efficient gettering. The gettering efficiency is estimated based on the recombination coefficient of the minority carriers diffusing through the wafer across surfaces, taking into account both dissolved and precipitated impurity.

Full Text

Duke Authors

Cited Authors

  • Plekhanov, PS; Gafiteanu, R; Gösele, UM; Tan, TY

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 86 / 5

Start / End Page

  • 2453 - 2458

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.371075

Citation Source

  • Scopus