Nucleation barrier of voids and dislocation loops in silicon


Journal Article

We have calculated the nucleation energy barrier of voids and vacancy (V) type dislocation loops in Si under V-supersaturation conditions. The barrier of V-type dislocation loops is higher than that of voids by more than one order of magnitude, with the former exceeding 35 eV at attainable V-supersaturation levels. Thus, voids can be nucleated, but not dislocation loops. This provides an explanation for the observations that, in Si crystals grown under V-supersaturation conditions, voids exist but V-type dislocation loops do not. Voids seriously degrade the Si device gate oxide integrity. It is highly probable that the D-type swirl defects in Si are nanoscopic voids. Our calculated results have also provided information for limiting the formation temperature range of the D-swirl defects to be lower than ∼1050 °C, and the Si V formation enthalpy to be above ∼3.0 eV. © 1997 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Plekhanov, P; Gösele, UM

Published Date

  • March 31, 1997

Published In

Volume / Issue

  • 70 / 13

Start / End Page

  • 1715 - 1717

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.118652

Citation Source

  • Scopus