Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon

An analysis of the conditions for obtaining oxidation-enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self-interstitials coexist at high temperatures and that during oxidation a local equilibrium of point defects is attained. It is shown that the Sb ORD data can be explained quantitatively. Under most oxidation conditions the SiO2-Si interface acts as a source of Si self-interstitials, but at sufficiently high temperatures and long oxidation times the SiO2-Si interface behaves as a sink for Si self-interstitials (or equivalently as a source of vacancies). We suggest a model for this sink behavior in terms of the formation of SiO molecules at the interface and of their subsequent diffusion into the SiO2 film.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Gösele, U

Published Date

  • 1982

Published In

Volume / Issue

  • 40 / 7

Start / End Page

  • 616 - 619

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.93200

Citation Source

  • SciVal