Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon

Published

Journal Article

An analysis of the conditions for obtaining oxidation-enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self-interstitials coexist at high temperatures and that during oxidation a local equilibrium of point defects is attained. It is shown that the Sb ORD data can be explained quantitatively. Under most oxidation conditions the SiO2-Si interface acts as a source of Si self-interstitials, but at sufficiently high temperatures and long oxidation times the SiO2-Si interface behaves as a sink for Si self-interstitials (or equivalently as a source of vacancies). We suggest a model for this sink behavior in terms of the formation of SiO molecules at the interface and of their subsequent diffusion into the SiO2film.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Gösele, U

Published Date

  • December 1, 1982

Published In

Volume / Issue

  • 40 / 7

Start / End Page

  • 616 - 619

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.93200

Citation Source

  • Scopus