Growth kinetics of oxidation-induced stacking faults in silicon: A new concept

It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Gösele, U

Published Date

  • 1981

Published In

Volume / Issue

  • 39 / 1

Start / End Page

  • 86 - 88

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.92526

Citation Source

  • SciVal