Detection of extended interstitial chains in ion-damaged silicon


Journal Article

We have carried out a high-resolution electron microscope lattice imaging study of As+ ion-damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated,〈110〉 chain-type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di-interstitial occupying the 〈100〉 split position is incorporated into every available site along a 〈110〉 chain.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Föll, H; Krakow, W

Published Date

  • December 1, 1980

Published In

Volume / Issue

  • 37 / 12

Start / End Page

  • 1102 - 1104

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.91888

Citation Source

  • Scopus