Oxide precipitation at silicon grain boundaries


Journal Article

Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates. © 1997 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Schroer, E; Hopfe, S; Werner, P; Gösele, U; Duscher, G; Rühle, M; Tan, TY

Published Date

  • January 20, 1997

Published In

Volume / Issue

  • 70 / 3

Start / End Page

  • 327 - 329

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.118405

Citation Source

  • Scopus