Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

Journal Article (Journal Article)

Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850°C and 1100°C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism. © 1997 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Egger, U; Schultz, M; Werner, P; Breitenstein, O; Tan, TY; Gösele, U; Franzheld, R; Uematsu, M; Ito, H

Published Date

  • May 1, 1997

Published In

Volume / Issue

  • 81 / 9

Start / End Page

  • 6056 - 6061

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.364453

Citation Source

  • Scopus