Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon

An experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self-interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2 growth.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Ginsberg, BJ

Published Date

  • 1983

Published In

Volume / Issue

  • 42 / 5

Start / End Page

  • 448 - 450

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.93966

Citation Source

  • SciVal