Enhancement of gold solubility in silicon wafers

Edge-defined film-fed grown silicon wafers with a thin Au film deposited on one side were annealed at 950°C for various times. Spreading resistance probe measurements showed that at the wafer free surface the Au concentration was higher than the Au solubility in silicon found at the Au source side. Scanning electron microscopy, transmission electron microscopy, and energy-dispersive spectroscopy investigations revealed Au particles of nanometer size at the wafer free surface. The enhancement of the Au solubility at the wafer free surface is attributed to the existence of these small Au particles.

Full Text

Duke Authors

Cited Authors

  • Li, J; Yang, WS; Tan, TY

Published Date

  • 1992

Published In

Volume / Issue

  • 71 / 1

Start / End Page

  • 527 - 529

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.350693

Citation Source

  • SciVal