Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion


Journal Article

Due to the need of relieving the strain associated with the formation of SiC-2 precipitates in silicon, co-precipitation of carbon with oxygen in silicon wafers may involve a large number of atomic and point defect species: oxygen, carbon, vacancies, and silicon self-interstitials. This allows many parallel mechanisms for strain relief to occur. In the present paper we first reason that this complex system may be reduced to that involving only three species: oxygen, carbon, and self-interstitials; and the strain relief mechanisms may be limited to two: that via self-interstitials and that involving carbon. We then propose a dominant (strain relief species) flux criteria to explain the behavior of carbon and oxygen co-precipitation in silicon. When the carbon flux is dominant, carbon should co-precipitate with oxygen. When the silicon self-interstitial flux is dominant, carbon should not coprecipitate with oxygen, even at high concentrations. Available data, spanning the temperature range of 450- 1000°C and a carbon concentration range of from less than 0.5 x 1016 to 1 x 1018 cm-3, can be explained using this criterion. © 1993 The Japan Society of Applied Physics.

Full Text

Duke Authors

Cited Authors

  • Taylor, WJ; Gosele, UM; Tan, TY

Published Date

  • January 1, 1993

Published In

Volume / Issue

  • 32 / 11 R

Start / End Page

  • 4857 - 4862

Electronic International Standard Serial Number (EISSN)

  • 1347-4065

International Standard Serial Number (ISSN)

  • 0021-4922

Digital Object Identifier (DOI)

  • 10.1143/JJAP.32.4857

Citation Source

  • Scopus