Laser annealing of silicon implanted with both argon and arsenic


Journal Article

Silicon samples implanted with both Ar and As at fluences of 1×1016/cm2 were irradiated with Q-switched Nd:YAG double-frequency laser pulses. Reordering of the damaged layers occurs for 30- and 130-keV Ar implants at about 0.6 and 1.3 J/cm2, respectively. An Ar concentration of the order of (1-3)×1020 atoms/cm 3 is retained, while good As substitutionality is observed. The presence of Ar atoms does not seem to inhibit the As-Si reordering during pulsed laser annealing, and likewise the As atoms do not seem to inhibit Ar out-diffusion. This behavior contrasts markedly with the strong coupling found in furnace annealing.

Full Text

Duke Authors

Cited Authors

  • Rimini, E; Chu, WK; Baglin, JEE; Tan, TY; Hodgson, RT

Published Date

  • December 1, 1980

Published In

Volume / Issue

  • 37 / 1

Start / End Page

  • 81 - 83

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.91711

Citation Source

  • Scopus