Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si


Journal Article

Multicrystalline Si for photovoltaic applications is a very inhomogeneous material with localized regions of high dislocation density and large impurity and precipitate concentrations which limit solar cell efficiency by acting as carrier recombination sites. Due to slow dissolution of precipitates in multicrystalline Si, these regions cannot be improved by conventional P and Al gettering treatments for removal of metal impurities which give good results for single crystal Si. It is shown that an extended high temperature Al gettering treatment can improve minority carrier diffusion lengths in these low quality regions and homogenize the electrical properties of multicrystalline Si wafers. © 2001 Elsevier Science B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Joshi, SM; Gösele, UM; Tan, TY

Published Date

  • December 15, 2001

Published In

Volume / Issue

  • 70 / 2

Start / End Page

  • 231 - 238

International Standard Serial Number (ISSN)

  • 0927-0248

Digital Object Identifier (DOI)

  • 10.1016/S0927-0248(01)00029-0

Citation Source

  • Scopus