The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature


Journal Article

Hydrogenated amorphous boron thin films have been produced on quartz substrates heated to 150, 250, and 350°C by the glow discharge decomposition of a gas mixture of 5 v/o BoHg and 95 v/o H2. Doped films have also been prepared by the addition of 1 a/o C2H4 or 0.5 a/o SiH4. The absorp-tion coefficients as a function of wavelength across the visible spectrum and the concomitant optical band gaps of all films were measured. The optical band gaps of the films produced at 150 and 250°C were approximately 2.1 eV while those films produced at 350°C showed band gaps between 1.6 and 1.4 eV. These results indicate that it is possible to optimize theroretical photovoltaic conversion efficiencies of solar cells based on hydrogenated amorphous boron thin films produced by glow discharge methods through the tailor-ing of the optical band gap by control of substrate temper-ature. © 1981 AIME.

Full Text

Duke Authors

Cited Authors

  • Dimmey, LJ; Park, H; Jones, PL; Cocks, FH

Published Date

  • January 1, 1981

Published In

Volume / Issue

  • 10 / 1

Start / End Page

  • 111 - 117

Electronic International Standard Serial Number (EISSN)

  • 1543-186X

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/BF02654904

Citation Source

  • Scopus