Observation of light-induced current from a porous silicon device
Many technological and scientific applications of porous silicon arise from its unique properties, which include photoluminescence and electroluminescence. Here we report for the first time the observation of a photocurrent from a micro-porous silicon device. The wavelength dependence of the photocurrent from the porous silicon device is shown and compared to the photoluminescence spectrum. A high-concentration phosphorus profile between a metal layer and a layer of p-type porous silicon is used to form an electrical contact to the porous p-type silicon. The phosphorus profile results in a n-type porous layer and in a p/n-junction in the porous silicon. The resulting n+/p-structure possesses a much lower electrical resistance than a metal contact directly on p-type porous silicon. The current voltage characteristic of the device shows ohmic current limitation. © 1992.
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Related Subject Headings
- Materials
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0303 Macromolecular and Materials Chemistry
Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Materials
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0303 Macromolecular and Materials Chemistry