A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process

Published

Journal Article

A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2-μm double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.

Duke Authors

Cited Authors

  • Thomsen, A; Brooke, MA

Published Date

  • March 1, 1991

Published In

Volume / Issue

  • 12 / 3

Start / End Page

  • 111 - 113

International Standard Serial Number (ISSN)

  • 0193-8576

Citation Source

  • Scopus