InP-based AlInAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications


Journal Article

The InP-based AlInAs-GaAsSb-GaInAs heterojunction bipolar transistors (HBTs) have been grown by solid-source molecular-beam epitaxy (SSMBE). Since the AlInAs-GaAsSb heterojunction has a type-II (staggered) band lineup, the conduction-band discontinuity is negligible at 300 K (10 meV). Thus, the turn-on voltage is significantly lower than that of an AlInAs-GaInAs HBT even without compositional grading of the emitter-base junction. A self-aligned process was used to fabricate large area devices. The measured turn-on voltage and collector-emitter offset were 0.36 V and 0.23 V, respectively, with a DC gain of approximately 25 and ideality factors of ηC = 1.01 and ηB = 1.1 at JC = 10 kA/cm2 collector-current density.

Full Text

Duke Authors

Cited Authors

  • Yi, C; Kim, TH; Brown, AS

Published Date

  • January 1, 2002

Published In

Volume / Issue

  • 31 / 2

Start / End Page

  • 95 - 98

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/s11664-002-0153-0

Citation Source

  • Scopus