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Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology

Publication ,  Journal Article
Mishra, UK; Jensen, JF; Brown, AS; Thompson, MA; Jelloian, LM; Beaubien, RS
Published in: IEEE Electron Device Letters
January 1, 1988

Fifteen-stage ring oscillators and static flip-flop frequency dividers have been fabricated with 0.2-μm gate-length AlInAs/GalnAs HEMI technology. The fabricated HEMT devices within the circuits demonstrated a gm of 750 mS/mm and a full channel current of 850 mA/ mm. The measured fT of the device is 120 GHz. The shortest gate delay measured for buffered FET logic (BFL) ring oscillators at 300 K was 9.3 ps at 66.7 mW/gate (fanout = 1); fanout sensitivity was 1.5 ps per fanout. The shortest gate delay measured for capacitively enhanced logic (CEE) ring oscillators at 300 K was 6.0 ps at 23.8 mW/gate (fanout = 1) with a fanout sensitivity of 2.7 ps per fanout. The CEL gate delay reduced to less than 5.0 ps with 11.35-mW power dissipation when measured at 77 K. The highest operating frequency for the static dividers was 26.7 GHz at 73.1 mW and 300 K. © 1988 IEEE.

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Published In

IEEE Electron Device Letters

DOI

EISSN

1558-0563

ISSN

0741-3106

Publication Date

January 1, 1988

Volume

9

Issue

9

Start / End Page

482 / 484

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Mishra, U. K., Jensen, J. F., Brown, A. S., Thompson, M. A., Jelloian, L. M., & Beaubien, R. S. (1988). Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology. IEEE Electron Device Letters, 9(9), 482–484. https://doi.org/10.1109/55.6952
Mishra, U. K., J. F. Jensen, A. S. Brown, M. A. Thompson, L. M. Jelloian, and R. S. Beaubien. “Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology.” IEEE Electron Device Letters 9, no. 9 (January 1, 1988): 482–84. https://doi.org/10.1109/55.6952.
Mishra UK, Jensen JF, Brown AS, Thompson MA, Jelloian LM, Beaubien RS. Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology. IEEE Electron Device Letters. 1988 Jan 1;9(9):482–4.
Mishra, U. K., et al. “Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology.” IEEE Electron Device Letters, vol. 9, no. 9, Jan. 1988, pp. 482–84. Scopus, doi:10.1109/55.6952.
Mishra UK, Jensen JF, Brown AS, Thompson MA, Jelloian LM, Beaubien RS. Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology. IEEE Electron Device Letters. 1988 Jan 1;9(9):482–484.

Published In

IEEE Electron Device Letters

DOI

EISSN

1558-0563

ISSN

0741-3106

Publication Date

January 1, 1988

Volume

9

Issue

9

Start / End Page

482 / 484

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering