Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy


Journal Article

We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350°C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450°C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Full Text

Duke Authors

Cited Authors

  • Brown, AS; Kim, TH; Choi, S; Wu, P; Morse, M; Losurdo, M; Giangregorio, MM; Bruno, G; Moto, A

Published Date

  • July 31, 2006

Published In

Volume / Issue

  • 3 /

Start / End Page

  • 1531 - 1535

International Standard Serial Number (ISSN)

  • 1862-6351

Digital Object Identifier (DOI)

  • 10.1002/pssc.200565150

Citation Source

  • Scopus