Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets
We report microwave characterisation of nominally 1 μM gate Al0.48In0.52As/Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors MODFETs). The Al0.48In0.52As/Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS/mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2 μM-gate MODFET. © 1987, The Institution of Electrical Engineers. All rights reserved.
Palmateer, LF; Tasker, PJ; Itoh, T; Brown, AS; Wicks, GW; Eastman, LF
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