Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets

Published

Journal Article

We report microwave characterisation of nominally 1 μM gate Al0.48In0.52As/Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors MODFETs). The Al0.48In0.52As/Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS/mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2 μM-gate MODFET. © 1987, The Institution of Electrical Engineers. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Palmateer, LF; Tasker, PJ; Itoh, T; Brown, AS; Wicks, GW; Eastman, LF

Published Date

  • January 1, 1987

Published In

Volume / Issue

  • 23 / 1

Start / End Page

  • 53 - 55

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:19870039

Citation Source

  • Scopus